High Temperature Electronics.

Abstract

The fabrication of a silicon carbide (SiC) junction field effect transistor (J-FET) was shown practicable. Several amplifier designs were breadboarded with silicon devices to study the required parameters. A simplified building block amplifier was constructed and tested. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1971
Accession Number
AD0727761

Entities

People

  • C. E. Hardies
  • H. S. Berman
  • R. B. Campbell
  • W. D. Loftus

Organizations

  • Westinghouse Electric Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Compound Semiconductors
  • Electronic Amplifier
  • Electronics
  • Field Effect Transistors
  • High Temperature
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Silicon
  • Silicon Carbide
  • Solid State Electronics
  • Transistors

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Software Engineering

Technology Areas

  • Microelectronics