Development of a 10,000,000 Bit Magnetic Film Memory
Abstract
Batch fabrication techniques for making 200,000 bit substrates with word lines integral with a closed magnetic film structure and keepered digit lines on large area substrates are described. A sense amplifier was designed which does not require a transformer for impedance matching to the digit lines. Cross-section-stack tests proved the feasibility of a 10 million bit memory with 1.0 microsecond cycle time. All fabrication processes are consistent with the goal of low memory construction costs.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 10, 1971
- Accession Number
- AD0727768
Entities
People
- Allan H. Anderson
- C. E. Woodward
- Jack I. Raffel
- Mark L. Naiman
- Robert Berger
- Terry O. Herndon
- Thomas S. Crowther
Organizations
- Massachusetts Institute of Technology