Gallium Arsenide Microwave Diodes.
Abstract
Epitaxial Gallium Arsenide grown in a vapor phase, hydrogen, gallium, arsenic trichloride (H2-Ga-AsCl3) system has been produced in two separate reactors, each representing a different design approach. System No. 1 is a more conventional reactor with a bypass and stopcock controlled gas flow. Epi material has been reproducibly grown in this system. The resulting n on n+ epi layers have been made into Schottky barrier avalanche transit time diodes, and then evaluated for microwave performance. System No. 2 employs some novel design approaches which should ultimately lead to high purity material. A third system using argon as a carrier gas was set up, but no growth could be obtained with it. It was concluded that oxygen present in the argon produced gallium boat and that this precluded successful growth. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1971
- Accession Number
- AD0728122
Entities
People
- J. I. Hanoka
Organizations
- RTX