Characterization of Conduction Processes in Amorphous Semiconductors

Abstract

Several different samples of 2As2Se3.As2Te3, As2Se3, As2Te3, As2S3 and Si(3%) Ge(4%) As(38%) Te(55%) were used in the photodielectric tests. The experiment was performed on these samples at room temperature, liquid nitrogen temperature (77K) and liquid helium temperature (4.2K) results are discussed.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1971
Accession Number
AD0728160

Entities

People

  • J. L. Stone

Organizations

  • Texas A&M University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Cavity Resonators
  • Electric Fields
  • Electrons
  • Energy Bands
  • Energy Gaps
  • Frequency Shift
  • Klystrons
  • Lasers
  • Measurement
  • Microwave Equipment
  • Optical Absorption
  • Optical Properties
  • Resonance
  • Resonant Frequency
  • Resonators
  • Semiconductors

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene