Investigation of Highly-Doped Schottky-Barrier Field-Effect Transistors,

Abstract

Schottky-barrier field-effect transistors with channel layers near 800 A thickness have been investigated. Investigations on palladium-silicon contacts have shown a barrier lowering exceeding the image-force lowering. Noise temperature measurements have been performed in the hot electron region to explain noise behavior of silicon Schottky-barrier FET's. The results indicate good agreement with the theory of Moll for low fields. GaAs Schottky-barrier FET's with high performance were realized in the one micron structure for gate length and contact separation. Device layout and technology are described in detail. A 17 GHz one-transistor oscillator with 4 mW output power and a four-stage amplifier operating at 14.9 GHz with a 3 dB bandwidth of 150MHz have been built with such GaAs transistors in a stripline technique. (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 16, 1970
Accession Number
AD0728635

Entities

People

  • Karsten E. Drangeid

Organizations

  • IBM Thomas J. Watson Research Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Agreements
  • Amplifiers
  • Bandwidth
  • Electronic Amplifier
  • Electronic Equipment
  • Electronics
  • Electrons
  • Field Effect Transistors
  • Measurement
  • Oscillators
  • Palladium
  • Semiconductor Devices
  • Solid State Electronics
  • Thickness
  • Transistors

Fields of Study

  • Materials science

Readers

  • Electrical Engineering
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics