Channeling Effect Analysis of Lattice Disorder in Boron Implanted Silicon,

Abstract

The report describes a method for obtaining consistent disorder distributions from helium and proton backscattering analyses of the disordered regions in boron implanted silicon. Measurements are given of temperature effects on the disorder in regions of low temperature where such effects were not anticipated. An application of the backscattering analysis technique to study the composition of thin layers is presented. (Author)

Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1971
Accession Number
AD0728709

Entities

People

  • James Edward Westmoreland Iii

Organizations

  • California Institute of Technology

Tags

DTIC Thesaurus Topics

  • Backscattering
  • Diseases And Disorders
  • Low Temperature
  • Measurement

Fields of Study

  • Physics

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