Mathematical Simulation of the Effects of Ionizing Radiation on Semiconductors,
Abstract
The report outlines results of mathematical investigations on the function field-effect transistor and the insulated gate field-effect transistor. A status report is presented on a newly developed numerical technique for solving the ambipolar diffusion equations for holes and electrons in semiconductor material. In two spatial dimensions, calculations performed establish that a soft or low resistance type of current saturation is observed in JFET structures having a low resistance semiconductor substrate. A significant part of the investigation is directed toward analysis of IGFET devices. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1971
- Accession Number
- AD0728710
Entities
People
- David P. Kennedy
Organizations
- International Business Machines Corporation (Armonk, NY)