Radiation Effects on Gallium Arsenide Phosphide and Gallium Phosphide Schottky Barrier Diodes.

Abstract

Gallium arsenide phosphide (GaAsP) and gallium phosphide (GaP) Schottky barrier diodes were fabricated and the transient ionizing and stable fast neutron radiation effects on these diodes were determined. (Author)

Document Details

• Document Type: Technical Report
• Publication Date: Jul 01, 1971
• Accession Number: AD0728800

Entities

People

• D. A. Neamen
• Wayne W. Grannemann

Organizations

• University of New Mexico

Tags

DTIC Thesaurus Topics

• Corpuscular Radiation
• Diodes
• Fast Neutrons
• Gallium
• Gallium Arsenides
• Neutrons
• Radiation
• Radiation Effects
• Schottky Diodes

Fields of Study

• Materials science

Readers

• Nuclear and Radiation Engineering.
• Semiconductor Device Technology

Technology Areas

• Microelectronics