Physical Properties of Semiconductors AIIIBV and IIIBVI (Selected Articles),

Abstract

;Contents: Optical properties of heavily doped gallium arsenide within a wide spectrum interval; Certain electrical and thermal properties of AlSb crystals.

Document Details

Document Type
Technical Report
Publication Date
Jul 08, 1971
Accession Number
AD0729080

Entities

People

  • A. P. Landsman
  • A. R. Mikhailov
  • M. B. Kagan
  • M. M. Koltun
  • Ya. Agaev

Organizations

  • National Air and Space Intelligence Center

Tags

DTIC Thesaurus Topics

  • Advanced Materials
  • Chemical Compounds
  • Compound Semiconductors
  • Electronics
  • Engineered Materials
  • Gallium
  • Gallium Arsenides
  • Intervals
  • Materials
  • Optical Properties
  • Physical Properties
  • Plasmonic Materials
  • Semiconductors
  • Solid State Electronics
  • Spectra
  • Thermal Properties

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics