Infrared Photoconductivity of Electron-Irradiated Phosphorus Doped Silicon.
Abstract
The annealing behavior and the uniaxial stress responses of the radiation - induced defect causing the (E sub C) - 0.75 eV, (E sub C) - 0.42 eV and (E sub C) - 0.18 eV photoconductivity energy levels in n-type silicon were studied after 1.5 MeV electron and 60Co gamma ray irradiation. The results suggest that the (E sub C) - 0.75 eV level arises from the electronic transition of the neutral charge state of the divacancy to the conduction band, the (E sub C) - 0.18 eV level arises from the A-center defect which exhibits only one kind of stress response, i.e. the atomic redistribution among the allowable orientations. No electronic response can be observed for the A-center in the case of photoconductivity measurements. The data fit very well with the A-center model given by G. D. Watkins and J. W. Corbett. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1971
- Accession Number
- AD0729477
Entities
People
- John C. Corelli
- Rosa C. Young
Organizations
- Rensselaer Polytechnic Institute