Electron Beam Semiconductor Amplifier (L-Band).
Abstract
The objective of the program is to conduct experimental investigation of the design and fabrication techniques leading to the construction, testing and delivery of three experimental development model pulsed RF amplifiers which will generate 2,000 watts of peak pulse power in a 20 percent bandwidth centered at 1.3 GHz, 25 dB gain, and meet 50 percent efficiency objective. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1971
- Accession Number
- AD0729805
Entities
People
- William Hershyn
Organizations
- Watkins-Johnson Company