New Methods for Growth and Characterization of GaAs and Mixed III-V Semiconductor Crystals

Abstract

A new Czochralski technique for growing bulk gallium arsenide crystals has been invented and developed. A new technique for drying B2O3 for liquid encapsulation has been developed. It was discovered that surface moisture on vitreous B2O3 can be removed by exposing the material to a vacuum at room T. Improved smoothness of this films of GaAs grown by liquid epitaxial growth was achieved by adding rsenic to the hydrogen during growth. Alloy films have been grown and field effect transistors have been produced. Glow discharge spectroscopy was developed into an analytical technique for measuring and profiling the concentrations of constituents in this films. Theoretical advances have been made in the behavior of Schottky barriers. New polishing techniques, techniques for producing reliable ohmic contacts, and for orienting crystals have been developed.

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Document Details

Document Type
Technical Report
Publication Date
Aug 19, 1971
Accession Number
AD0730018

Entities

People

  • William R. Wilcox

Organizations

  • University of Southern California

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemistry
  • Crystal Growth
  • Crystals
  • Detection
  • Electrical Properties
  • Electronics Laboratories
  • Electrons
  • Energy Bands
  • Field Effect Transistors
  • Heat Energy
  • Lasers
  • Materials
  • Measurement
  • Semiconductor Devices
  • Semiconductors
  • Transition Temperature
  • Transitions

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Materials Science and Engineering.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene