Electronic States and Transport in Highly Doped Semiconductors.

Abstract

The resistivity and the Hall coefficient in doped semiconductors are calculated using the Green function method for high impurity concentration at temperatures near zero. The results are compared with the experimental results. Through this comparison, the effects of localized states in the impurity band to the resistivity and the Hall coefficient are investigated. (Author)

Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1971
Accession Number
AD0730091

Entities

People

  • Mohit Bhattacharyya
  • Shinzo Nakai
  • Waldemar F. Klawiter

Organizations

  • University of Wyoming

Tags

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Coefficients
  • Compound Semiconductors
  • Electronic States
  • Electronics
  • Impurities
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Semiconductors
  • Silicon Carbide
  • Silicon Compounds
  • Solid State Electronics
  • Transport Ships

Fields of Study

  • Materials science
  • Physics

Readers

  • Electromagnetic Wave Scattering and Antenna Radiation Engineering
  • Optical Physics and Photonics.
  • Plasma Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene