Sputtered Zinc Sulphide Films on Silicon,
Abstract
The design of a triode RF sputtering system for the deposit of high purity films of Zinc Sulphide is outlined. It is shown that the deposited films have a high degree of purity and are highly oriented crystallographically. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1971
- Accession Number
- AD0730332
Entities
People
- T. G. R. Rawlins