Energy Migration in Irradiated Solids.
Abstract
Evidence for energy migration over distances ca. 10 nm in semiconducting solids follows from results obtained on energy transfer at illuminated Gas/Semiconductor and Aqueous Solution/Semiconductor interfaces. Chemical changes at Gas/Semiconductor interfaces in the dark involved electron localization by adsorbed molecules as shown by studies of conductivity, electron spin resonance and kinetics. Additional chemical reaction was observed when these dark-equilibrated interfaces were exposed to u.v. light. For N2O(g)/ZnO(s), observed photoconductivity and kinetic results were consistent with migration of photo-produced holes to the interface followed by electrons but the quantum efficiency was only 0.00001. For CD3I(g)/ZnO(s), results were more consistent with migration of excitons. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 1971
- Accession Number
- AD0730383
Entities
People
- Joseph M Cunningham
Organizations
- University College Dublin