Band Structure and Electrical Properties of Amorphous Semiconductors

Abstract

Tunneling studies into chalcogenide glasses are reviewed, in order to determine the density of localized states in these materials. Low-temperature (4-77K) switching is investigated in order to determine whether or not trap- filling is a significant feature of the ON-state. The photovoltaic properties of metal-chalcogenide glass junctions is studied. The effects of thermal- neutron irradiation on the physical properties of chalcogenide glasses is investigated in detail. An intensive study of the EPR spectra of memory-type material in both the conducting and non-conducting states is planned. The comparative investigation of crystalline and amorphous Si2Te3 is given.

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Document Details

Document Type
Technical Report
Publication Date
Jun 30, 1971
Accession Number
AD0730467

Entities

People

  • David Adler

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Conduction Bands
  • Critical Temperature
  • Electrical Properties
  • Energy Bands
  • Films
  • Heat Energy
  • Materials
  • Military Research
  • Optical Absorption
  • Optical Materials
  • Optical Properties
  • Phase Transformations
  • Physical Properties
  • Semiconductors
  • Thermal Neutrons
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Nanocomposite Materials Science
  • Semiconductor Device Technology
  • Surface Coatings Technology.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene