Photoconductivity and Surface Degradation of Degenerate N-Type GaAs Resulting from Laser Emission,
Abstract
An experimental and theoretical study of photoconductivity and surface damage of n-type GaAs resulting from pulsed ruby laser emission is presented in this report. Experiment and theory indicate that sublinearity of the photoconductivity is caused by electron-hole recombination, the rate of which increases approximately with excitation as the product of electron and hole densities. Surface damage is concurrent with degradation of the phoroconductivity response. Electron microprobe analysis indicates that during intense optical excitation, Ga rich material develops on the surface with As escaping into the air. Details of the experimental arrangement for photoconductivity measurements are given, and surface damage is shown via photomicrographs. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1971
- Accession Number
- AD0730663
Entities
People
- J. Lynn Smith
Organizations
- United States Army Aviation and Missile Command