Silicon RF Power Transistor Metallization

Abstract

The effects of high temperatures and high current densities on the physical properties of aluminum metallization on semiconductor devices were studied. In particular, this research was concerned with three possible failure modes of the metallization; electromigration, interdiffusion of silicon and aluminum, and metallization reconstruction due to thermal cycling. Electromigration theories are discussed and an engineering curve predicting MTF for an Al-2% Cu alloy was obtained.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1971
Accession Number
AD0730774

Entities

People

  • Edward L. Hall

Organizations

  • Motorola Mobility

Tags

DTIC Thesaurus Topics

  • Air Force
  • Diagrams
  • Diameters
  • Diffusion Coefficient
  • Energy
  • Failure Mode And Effect Analysis
  • Grain Size
  • Materials
  • Measurement
  • Metal-Semiconductor Junctions
  • Microscopes
  • New York
  • Phase Diagrams
  • Physical Properties
  • Semiconductor Devices
  • Semiconductors
  • Temperature Gradients

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Materials Science (Mechanical Engineering).
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics