High Temperature Creep of Ceramic Oxides.

Abstract

The creep behavior and the dislocation substructure developed during creep were investigated for <011> oriented MgO single crystals in tension. The creep properties were studied over the stress and temperature ranges of 4200 to 12,500 psi and 1200 to 1500C and the creep behavior is described by a formula. The dislocation substructure developed during creep was studied by transmission electron microscopy and etch pitting techniques. The dislocation density at 0.10 tensile creep strain, which is in the general region of the steady state creep rate, was dependent on stress. Numerous boundaries were seldom observed. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 08, 1971
Accession Number
AD0731853

Entities

People

  • A. H. Clauer
  • B. A. Wilcox

Organizations

  • Battelle Memorial Institute

Tags

DTIC Thesaurus Topics

  • Boundaries
  • Crystals
  • Dislocations
  • Electron Microscopy
  • Electrons
  • High Temperature
  • Microscopy
  • Optical Analysis
  • Single Crystals
  • Steady State
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Materials Science (Mechanical Engineering).
  • Nanofabrication and Microfabrication.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene