Regenerative Gate Turn-On Thyristor Design with Very Fast Turn-Off.
Abstract
An attempt was made to fabricate fast turn-off complementary SCR's using both anode sweep-out and sweep-out from the upper base region of the device. The sweep-out principle was found ineffective for clearing excess charge from the wide center base of the complementary SCR. Evidence is presented to show that excessive carrier trapping is present in the devices fabricated, which also lengthens the device turn-off time. The results show that the complementary structure has inherently good turn-on characteristics, but it also exhibits remarkably poor turn-off characteristics. The authors also encountered problems obtaining the designed blocking voltage. The authors were only able to obtain blocking voltages of about one-third (1/3) of our design goals. The most likely reason that the authors failed to achieve good voltage on the test group of devices was due to tramp impurity contamination and to an ineffective final gettering diffusion. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1971
- Accession Number
- AD0732904
Entities
People
- D. I. Gray