The Annealing of ZnS Films on Silicon,

Abstract

ZnS films were annealed over periods of a few minutes, while the structure was being observed by electron diffraction, and over 24 hour periods in a separate furnace. It is shown that for the range of thickness studied 0.1 - 1.2 micrometers, though it is possible to produce a definite improvement in structure it is not possible to produce single crystal films; this is compared with the work of Cho and GaAs films. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1971
Accession Number
AD0733272

Entities

People

  • C. R. Jones
  • T. G. R. Rawlins

Tags

DTIC Thesaurus Topics

  • Annealing
  • Crystals
  • Diffraction
  • Electron Diffraction
  • Electrons
  • Micrometers
  • Single Crystals
  • Thickness
  • Wave Phenomena

Readers

  • Materials Science and Engineering.
  • Nanofabrication and Microfabrication.
  • Toxicology/Environmental Toxicology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene