Pulse Power Testing of Microcircuits.

Abstract

Failure analysis of microcircuits subjected to high current transient pulses (ranging from 100 nanoseconds to 10 microseconds in duration) has shown the principal cause of failure to be junction shorting (98%) as opposed to metallization burn-out (2%). However, in the dielectrically isolated, thin film resistor technology, the weakest link was the susceptibility of the thin film resistors to the transient pulse. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1971
Accession Number
AD0733342

Entities

People

  • Jack S. Smith

Organizations

  • Rome Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Electronic Components
  • Electronic Equipment
  • Failure Analysis
  • Film Resistors
  • Films
  • Fixed Resistors
  • Microcircuits
  • Microsecond Time
  • Nanosecond Time
  • Passive Electronic Components
  • Resistors
  • Thin Film Resistors
  • Thin Films

Fields of Study

  • Engineering
  • Physics

Readers

  • Microwave Engineering.
  • Software Engineering
  • Superconducting Magnet Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene