Photoresponse Characteristics of Extended Surface Barrier Diodes.
Abstract
Surface barrier diodes which show a reversal of the photoresponse polarity with changing photon energy have been fabricated by diffusing Cu into heavily n-type GaAs. The photoresponse is found to depend strongly upon applied bias. These properties are explained in terms of a model in which a thin compensated region at the semiconductor surface allows the simultaneous photoemission of both holes and electrons from the metal into the semiconductor. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 15, 1971
- Accession Number
- AD0733725
Entities
People
- David H. Seib
Organizations
- The Aerospace Corporation