400 Ampere High Power Transcalent Semiconductor Thyristor Device. Supplementary Report No. 2.
Abstract
Work performed was devoted to the development of a silicon thyristor wafer which could be cooled from both sides in the transcalent package to take maximum advantage of the thermal dissipation capabilities of the heat pipe. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1971
- Accession Number
- AD0733942
Entities
People
- S. W. Kessler