A Radiation Effects Research Program.
Abstract
;Contents: Radiation effects on gallium arsenide phosphide and gallium phosphide Schottky barrier diodes; Diffusion of Zn in GaAsP; Low volume depletion region Schottky barrier diodes; Neutron and gamma radiation effects in GaAs laser diodes and bulk materials; MIS (Metal-Insulator-Semiconductor) studies; Fabrication and testing of GaAsP MIS capacitors; Thermal oxidation of gallium arsenide phosphide; Electron beam irradiation studies; Magnetoresistance and radiation effects on electron beam evaporated high mobility thin films of indium antimonide; Hall effect in dielectric material; Micro-hall device studies; Radiation effects on epitaxial silicon; Semiconductor modeling study; Electrons in disordered crystals; Application of invariant imbedding methods to problems of transport theory and wave propagation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1971
- Accession Number
- AD0734160
Entities
People
- H. D. Southward
- L. T. Boatwroght
- R. C. Allen Jr.
- W. J. Byatt
- Wayne W. Grannemann
Organizations
- University of New Mexico