Electron Emission Studies of the IIB-VIA Semiconductor Compounds.
Abstract
X-ray induced electron emission measurements were used to determine the energy levels of core electrons in ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe, HgS, HgSe and HgTe. The investigated energy range extends from the bottom of the valence band (6-8 eV below the Fermi level) to about 1200 eV below the Fermi level. Chemical shifts were determined by comparing the results of these measurements with experimental values for the pure elements. These shifts are plotted as a function of the fractional ionicity values determined by Phillips and Van Vechten, Pauling and Coulson. Core level values for ZnSe and CdTe are compared with self-consistent relativistic orthogonalized plane wave calculations for the excitation energies of these compounds. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1971
- Accession Number
- AD0734241
Entities
People
- Charles Joseph Vesely
Organizations
- Air Force Institute of Technology