Preparation and Properties of Epitaxial Lead Sulfide Infrared Detectors.
Abstract
A new method is reported for growing high quality, epitaxial PbS films under near equilibrium conditions. Both n and p-type films ranging in carrier density from 1x10 to the 17th power to 3x10 to the 18th power/cc were prepared by adjusting their stoichiometry during the growth phase. A study of the photoconductive properties of these films indicates that excess carrier lifetimes are less than the radiative lifetimes due to recombination at shallow Shockley-Read centers. Photoconductive and photovoltaic infrared detectors were prepared from the films. The photovoltaic detectors were Schottky barriers formed by evaporating indium onto p-type PbS films. The author concludes that the PbS Schottky barrier photodiodes are superior in performance to the epitaxial photoconductive detectors. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 15, 1971
- Accession Number
- AD0734384
Entities
People
- Richard B. Schoolar
Organizations
- Naval Ordnance Laboratory