Methods of Measurement for Semiconductor Materials, Process Control, and Devices.
Abstract
The report, describes NBS activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Significant accomplishments during this reporting period include a demonstration of the high sensitivity of the infrared response technique by the identification of gold in a germanium diode doped to a level of 100 billion gold atoms per cubic centimeter, verification that transient in die attachment than steady-state thermal resistance, and development of a simplified circuit for screening transitors for susceptibility to hot-spot formation by the current-gain technique. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon; specification of germanium for gamma-ray detectors; evaluation of wire bonds and die attachment; measurement of thermal properties of semiconductor devices, transit time and related carrier transport properties in junction devices, and electrical properties of microwave devices; and characterization of silicon nuclear radiation detectors. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1971
- Accession Number
- AD0734427
Entities
People
- W. Murray Bullis
Organizations
- National Institute of Standards and Technology