Mechanism of the Transfer of Current in the Contact Metal-Gallium Arsenide,

Abstract

The mechanism of the transfer of current in diodes with the Shottky barrier, obtained by electrochemical deposition of metal on the surface of gallium arsenide, was investigated. The volt-ampere characteristics of junctions of nickel n-type gallium arsenide were examined in the temperature range 180-370K.

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1971
Accession Number
AD0734512

Entities

People

  • A. B. Vyatkin
  • N. K. Maksemova

Tags

DTIC Thesaurus Topics

  • Coatings
  • Deposition (Materials Processing)
  • Electrodeposition
  • Electrolytic Processes
  • Electroplating
  • Elements
  • Gallium
  • Gallium Arsenides
  • Group 13 Elements
  • Material Coating Processes
  • Materials Processing
  • Metals

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene