Direct Current and Small Signal Analysis for Avalanche Diode Design.
Abstract
The subject of the report is the Impatt or Avalanche diode. This diode is considered first from the d.c. point of view and an analysis of its behavior under these conditions are given. The results of this analysis lead to a series of graphs relating various parameters of the diode and thus yield guide lines for the design of a specific type of diode. Next the equivalent circuit of the diode is discussed by considering the device as made up of three regions: the avalanche region, the drift zone and the inactive region arising in an abrupt type of p-n junction diode. The results of this analysis show that a negative resistance develops which explains the oscillatory character of the diode. Finally the small signal theory is developed by adding small ac components to the dc components considered previously. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1971
- Accession Number
- AD0734816
Entities
People
- Maurice Druesne
Organizations
- United States Army Communications-Electronics Command