Surface Studies of Photoemissive Materials
Abstract
Results of a photoelectric study of clean and cesiated si(100) are presented and discussed. Both valence band and surface state emission was observed from the clean and cesiated silicon. The band bending at the silicon surface was determined as a function of cesium coverage. An apparatus was constructed to measure energy and angular distributions of secondary electrons. Results are presented demonstrating inelastic diffraction and characteristic losses. A preliminary study of surface inhomogeneities due to heating GaAs is presented. A deconvolution technique for increasing the resolution of Auger electron spectra obtained with conventional analyzers is described.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1971
- Accession Number
- AD0734849
Entities
People
- W. T. Peria
Organizations
- University of Minnesota