Investigation of Highly-Doped Schottky-Barrier Field-Effect Transistors: Gallium Arsenide,
Abstract
GaAs Schottky-barrier field-effect transistors have shown excellent properties as high-frequency devices and in respect to noise behavior. Improvements in technology and the physical layout have resulted in device qualities far beyond the limits of available measuring equipment. More precise techniques are therefore required for characterization. One viable approach with the existing equipment is error correction in scattering parameter measurements. This subject is discussed in the first section of the report. The second section deals with noise measurements on newly designed transistors with one gate land only. The measured results are discussed in detail and a model is given which includes noise contributions due to intervalley scattering and carrier drift velocity saturation. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 16, 1971
- Accession Number
- AD0735299
Entities
People
- Theodor O. Mohr
Organizations
- IBM Thomas J. Watson Research Center