A Thick-Film Microstrip Single-Sideband Pin Diode Modulator for X-Band,
Abstract
A microstrip single-sideband modulator that operates at 9 GHz was developed for simulating target doppler fuzes. The circuit consists of two PIN diodes terminating a single input-output line. These two diodes are located with a difference in electrical spacing from the common input line of one-eighth wavelength at the carrier frequency. The diodes are mounted onto gold tabs 20 by 65 mils with two 20-mil-long wire leads connected to the diode junction. Using a thick-film subtractive technique, the microstrip circuit is produced on alumina (Al2O3). Both sides of a standard 1-sq. in. alumina substrate are metallized, using thick-film technology; the microstrips are formed by photoetching one side. The diodes are epoxy bonded, and their wire leads are thermocompression bonded. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1971
- Accession Number
- AD0735317
Entities
People
- William L. Muckelroy
Organizations
- Harry Diamond Laboratories