Excess Noise in Semiconductors.
Abstract
Several experimental studies of the statistical properties of 1/f noise in semiconductors have shown that the probability amplitude distribution obeys a normal distribution law. The total variance of the distribution fluctuates in identical sample intervals. Variance fluctuations measured for several sources of 1/f noise are not normally distributed and appear to be derived from an exponential population. The variance noise spectrum is examined by a combined analog-digital technique and it is found to have a 1/f spectrum. The magnitude of 1/f noise in germanium is shown to be inversely proportional to the number of current carriers participating in conduction. This inverse relation holds for both extrinsic carriers and photocarriers generated by optical illumination. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 14, 1971
- Accession Number
- AD0735944
Entities
People
- James J. Brophy
Organizations
- IIT Research Institute