The Fabrication and Experimental Analysis of Metal-Insulator-Semiconductor Devices for Radiation Vulnerability Studies.

Abstract

The report discusses the following: The insulated gate field effect transistor (IGFET); Nuclear radiation effects on the IGFET; The fabrication of metal-insulator-silicon (MIS) capacitors; Analysis of the MIS capacitor; Testing of experimental devices, and Analysis of the experimental data.

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1971
Accession Number
AD0735947

Entities

People

  • T. A. Williamson
  • Wayne W. Grannemann

Organizations

  • University of New Mexico

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitors
  • Dielectrics
  • Experimental Data
  • Fabrication
  • Field Effect Transistors
  • Nuclear Radiation
  • Radiation
  • Radiation Effects
  • Semiconductor Devices
  • Semiconductors
  • Transistors

Fields of Study

  • Physics

Readers

  • Nuclear Civil Defense.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics