Semiconductor Conductivity Using a High Sensitivity Technique.
Abstract
An experimental study of a reflection cavity scheme used to measure changes in the conductivity of semiconductor samples is presented. The germanium sample with associated microwave circuitry acts as a highly sensitive system whereby in the null condition almost complete absorption occurs. Changes in conductivity from the null point will cause a sharp increase in reflected microwave power. This change in reflected power may be used to measure a change in conductivity, or in a device application would represent the output signal. Calculations indicate that as an infrared photo-conductive detector, this microwave effect may be competitive with state-of-the-art components. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1971
- Accession Number
- AD0736366
Entities
People
- Harold Jacobs
- Robert F. Diordano
- Samel Dixon Jr.
Organizations
- United States Army Communications-Electronics Command