Electrical and Optical Properties of III-V Semi-conductors.
Abstract
The electrical and optical properties of both n- and p-type GaAs irradiated at room temperature with 1-MeV electrons were measured and correlated. Post-irradiation annealing up to 500C was investigated. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 02, 1971
- Accession Number
- AD0736418
Entities
People
- Arne H. Kalma
- James A. Naber
- Robert A. Berger
- Roland E. Leadon