Vapor Deposition of Cadmium Selenide Thin Films,
Abstract
A method of reproducible formation of thin films of cadmium selenide by vapor deposition is presented. The method is characterized by the fact that cadmium selenides are formed by vapor deposition on a base board preheated to a temperature of 20 to 95 degrees centrigrade. The vapor deposition is made at a given speed, of 5 to 200 x 10 to the -10th power meters per second, and the subsequent processing of the film is done in vacuum at temperatures ranging from 50 to 400 degrees centrigrade. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 18, 1971
- Accession Number
- AD0736493
Entities
People
- Alois Kubovy
- Jaroslav Hamersky
Organizations
- National Air and Space Intelligence Center