Single-Diode Vidicon.
Abstract
The single-diode vidicon (SDV) that uses a single large-area N(+)P junction for imaging, was investigated for use in an electron-bombarded silicon (EBS) mode tube. A major portion of this work involved efforts to understand device operation, improve device parameters, identify problem areas associated with the device. Antimony trisulfide was used because it was easy to apply and appeared to enhance device performance. Several SDV targets fabricated in this manner were tested on a demountable test unit and three targets were mounted in a vidicon structure and characterized. Results of tests made on the prototypes fabricated have helped identify device modifications which are necessary for proper charge transfer and device operation. Several possible techniques are available for implementing the required modifications. Results from these structures compare favorably with results from standard guard-ring structures and do not require current to be supplied by the beam. The back-surface current is a very strong function of surface preparation and the type of storage film used. A sensitivity improvement by a factor of two to three at short wavelengths (approximately 0.4 microns) was noted by using very shallow junctions. This is important for the EBS tube where the carriers are generated near the surface. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1970
- Accession Number
- AD0736830
Entities
People
- Joseph B. Horak
- Robert L. Williams
Organizations
- Texas Instruments