Fundamental Studies of Semiconductors Heteroepitaxy
Abstract
The objective of this program is to carry out a fundamental study of nucleation and film growth mechanisms in heteroepitaxial semiconductor thin films, and to apply the results to the preparation of improved films and thin- film devices on insulating substrates. Both theoretical and experimental investigations are involved, with emphasis on chemical vapor deposition (CVD) techniques applied to the Si-on-Al2O3 and GaAs-on-Al2O3 systems. Two theoretical approaches to modeling the heteroepitaxial interface are being investigated.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1972
- Accession Number
- AD0736851
Entities
People
- Ralph P. Ruth