Image Conversion Panel Techniques Using Direct Carrier Injection (Diode Development).
Abstract
Large p-i-n diode structures suitable for use in millimeter wave image conversion panels have been developed. Typical dimensions are 0.25 cm in width by 0.28 cm in length by 0.11 cm in thickness between injecting contacts. Ion implanted arsenic and alloyed aluminum form the n and p junctions, respectively, on 18 kiloohm - cm silicon. Image conversion panels operating at 10 frames/sec and containing up to 1000 diode elements can be constructed using the present diodes. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1972
- Accession Number
- AD0737345
Entities
People
- J. M. Baird
Organizations
- HRL Laboratories