Field-Effect Transistor RF Power Amplifiers.
Abstract
The report documents the results of a series of tests devised to evaluate state-of-the-art field-effect transistors (FETs) as RF power amplifiers. Power output, gain and efficiency are studied; special attention is given to reliability and intermodulation distortion (IMD) evaluation. Conclusions drawn from the data indicate that integration of FETs in their present form into RF power amplifier designs is not feasible. Recommendations are made to modify present device designs to remove operational restrictions. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1971
- Accession Number
- AD0737595
Entities
People
- Martin Ringel
Organizations
- United States Army Communications-Electronics Command