Investigation of Silicon Carbide (SIC) Gun-Electron-Induced-Semiconductor-Hybrid-Amplifier (GEISHA) Diode Feasibility and Fabrication.
Abstract
Evaluation of single crystal alpha-SiC for GEISHA device application is underway. The electron carrier velocity was measured up to 8,200,000 cm/sec on 10 to the 17th power/cc uncompensated n-type crystals, with no indication of velocity saturation. The carrier saturation velocity is therefore expected to be above that of silicon. Schottky barrier diodes were fabricated on n(+)n and p(+)p SiC substrates which exhibited about half of the theoretically expected reverse blocking voltage. Soft reverse breakdown and a barrier height independent of metal layer of SiC type characterized all samples evaluated. Thin nonpenetrating ohmic contacts on SiC were developed using sputtered tungsten layers heated to 1700C after deposition. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 30, 1971
- Accession Number
- AD0737642
Entities
People
- Harvey C. Nathanson
- Herbert S. Berman
- Terence M. Heng