Investigation of Ion Beam Techniques for Microelectronics.
Abstract
Continued studies related to the use of low energy ion deposition for application to microelectronics are discussed. The reactive deposition of Cu(+) ions in O2, H2S and H2O ambients was investigated to determine the role of ion energy in promoting or altering the reaction between the ions and gases at a substrate surface. An apparent reaction was observed between Cu(+) and O2 or H2S, but not with H2O. The reactions were dependent upon the ion energy. Measurements of the optical and physical properties of the resultant films showed them to be substantially metallic in spite of considerable gas absorption during deposition. Results of measurements of the sorption of energetic Au ions by thin SiO2 surfaces are reported. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1971
- Accession Number
- AD0737668
Entities
People
- William B. Shepherd
Organizations
- Boeing