Structural Effects on Electrical Properties in Amorphous Semiconductors

Abstract

During this report period, work has been concentrated on a survey of the structure, electrical and magnetic properties of transition metal oxidephosphate glasses and glasses in the As2Te3-As2Se3 system which posses electrical or magnetic device potential. Examination of a series of FeO-P2O5 glasses has revealed a glass forming range which extends to 80 mole % FeO. Susceptibility and Mossbauer spectroscopy results on these glasses are reported herein. Results on a CuO-P2O5 glass indicate that the conduction mechanism in this system is partially ionic and thermal treatments can change the ionic mechanism to electronic. Detailed studies of the As2Te3-As2Se3 system has shown switching behavior which can be controlled with compositional variation. The compositional variation of the microstructure is noted in micrographs included in the report.

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Document Details

Document Type
Technical Report
Publication Date
Jan 31, 1972
Accession Number
AD0737916

Entities

People

  • D. L. Kinser
  • L. K. Wilson

Organizations

  • Vanderbilt University

Tags

DTIC Thesaurus Topics

  • Amorphous Materials
  • Conductivity
  • Dielectric Permittivity
  • Dielectric Properties
  • Dielectrics
  • Electrical Conductivity
  • Electrical Properties
  • Electron Microscopy
  • Frequency
  • Glass
  • Heat Of Activation
  • Materials
  • Materials Testing
  • Phosphate Glass
  • Physical Properties
  • Semiconductors
  • Spectra

Fields of Study

  • Materials science

Readers

  • Materials Science (Mechanical Engineering).
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene