Research on Amorphous Materials
Abstract
Contents: The density of states of crystalline and amorphous Ge and Si; Photoemission investigation of amorphous Si and Ge; Investigation of the band edges of amorphous Ge and Si; Impurity electrons in amorphous Germanium a photoemission argument for the Mott model; UV dielectric constants of a-Ge as a function of film density; Photoemission investigation of amorphous Germanium; Electronic structure of amorphous and polycrystalline GeTe; Calculation of the intercrystalline interference contribution to the scattering of X-rays by arrays of small crystallites; Neutron and X-ray diffraction radial distribution studies of amorphous Ge(.17)Te(.83); Structure and bonding in amorphous Ge(x)Te(1-x) alloys; Radial distribution studies of glassy Ge(x)S(1-x) alloys; Analysis of photoconductivity in amorphous chalcogenides.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1971
- Accession Number
- AD0738467
Entities
People
- A. Bienenstock
- R. H. Bube
- William E. Spicer
Organizations
- Stanford University