Synthesis of Compound Semiconducting Materials and Device Applications
Abstract
The present program concerns the synthesis of compound semiconducting materials, with particular emphasis on their use in planar microwave devices. The program consists of three major sections: thin film epitaxial growth of III-V compounds; device design, fabrication and evaluation; and fundamental studies of crystal synthesis and properties. The devices of primary interest are of the planar microwave and acoustical type, employing thin films of GaAs as the active layer. The topics include: observations of precipitation effects in GaAs by transmission electron microscopy; measurement of electrical property changes in GaAs induced by changes in dislocation density; and a theoretical analysis of the GaAs/liquid gallium interface.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1971
- Accession Number
- AD0738470
Entities
People
- B. L. Mattes
- D. A. Stevenson
- Gordon S. Kino
- R. H. Bube
- Robert S. Feigelson
Organizations
- Stanford University