Narrow Gap Semiconductors Pb(1-x)Sn(x)Te and Pb(1-y)Sn(y)Se.

Abstract

The purpose of this study is to develop a material process to grow device-grade Pb-Sn chalcogenide alloy thin films on insulating substrates for long wavelength infrared (LWIR) applications; to characterize their semiconductor behavior; and, to determine material properties of Pb-Sn chalcogenide alloys. (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1971
Accession Number
AD0738631

Entities

People

  • C. C. Wang
  • Tien F. Tao

Organizations

  • University of California, Los Angeles

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carbides
  • Chemical Compounds
  • Compound Semiconductors
  • Electronics
  • Films
  • Inorganic Carbon Compounds
  • Inorganic Chemicals
  • Long Wavelengths
  • Materials
  • Narrow Band Gap Semiconductors
  • Semiconductors
  • Silicon Carbide
  • Silicon Compounds
  • Solid State Electronics
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics