Certain Chemical Properties of Indium Phosphide,

Abstract

The rates of dissolution of indium phosphide in certain acids at various temperatures were determined. Etching agents are proposed for chemical polishing, finding dislocation pits, and also for detecting single-crystal nature of ingots of indium phosphide without using microstructural investigations. During abrasive treatment of indium phosphide using water, it is found that the source of liberation of phosphine is not only the hydrolysis reaction, but also includes processes leading to the reaction of InP with the products of its oxidation at points of local heating. (Author)

Document Details

Document Type
Technical Report
Publication Date
Oct 08, 1971
Accession Number
AD0738682

Entities

People

  • G. I. Markina
  • O. Ya. Gukov
  • V. L. Gordin
  • Ya. A. Ugai

Organizations

  • National Air and Space Intelligence Center

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Abrasives
  • Chemical Compounds
  • Chemical Properties
  • Chemistry
  • Compound Semiconductors
  • Crystals
  • Dislocations
  • Electronics
  • Hydrolysis
  • Oxidation
  • Phosphine
  • Polishing
  • Semiconductors
  • Single Crystals
  • Solid State Electronics

Fields of Study

  • Materials science

Readers

  • Electrochemical Engineering/ Fuel Cell Technologies
  • Semiconductor Device Technology