On the Formation of Beta-SiC in the Initial Growth Stage,
Abstract
The formation of Beta-SiC at temperatures outside its thermally stable range of 1,400-1,600C was studied experimentally using the sublimation procedure and the synthetic method with molten silicon. From consideration of the molar surface energy of Beta- and alpha-SiC, the following are shown to be the main causes for the phenomenon: (1) Given an equal volume of crystallites, the molar surface energy of the Beta-type is always lower than that of the alpha-type based on its higher lattice symmetry; (2) the bonding energy of the Beta-type is the lowest among the SiC polytypes from comparison of the band gaps; (3) the rate of transition from the Beta- to the alpha-type is not too large. The free energy gaps among the SiC polytypes were found to be smaller than 100 cal/mole. The effects of pressure and polarity are also discussed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 07, 1972
- Accession Number
- AD0739183
Entities
People
- S. Matsumoto
- Y. Inomata
Organizations
- Emmanuel College